Perturbations to the Stoner–Wohlfarth threshold in 2×20 μm M-R memory elements

Abstract
Perturbations to the Stoner–Wohlfarth threshold in 2×20 μm MR memory elements have been examined experimentally and analytically. For the small dimensioned elements studied the perturbations are large. The thresholds were reduced up to 50% for transverse elements and increased 10% or more for longitudinal elements.

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