Three-dimensional finite element simulation of semiconductor devices

Publisher Website

1 January 1980

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/isscc.1980.1156066

Abstract

No abstract available

Keywords

This publication has 1 reference indexed in Scilit:

Narrow channel effects in insulated gate field effect transistors
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1976