High-transconductance AlInAs/GaInAs HIFETs grown by MOCVD
- 12 March 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (6) , 297-298
- https://doi.org/10.1049/el:19870216
Abstract
We fabricated a lμm-gate-length heterointerface FET (HIFET) using a selectively doped AlInAs/GaInAs heterostructure grown by atmospheric-pressure MOCVD. The HIFET showed a transconductance as high as 530mS/mm at room temperature. This is the highest measurement of transconductance ever reported in this system.Keywords
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