AlInAs/InGaAs based heterojunction bipolar transistors fabricated by electron cyclotron resonance etch
- 1 May 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 9 (3) , 1445-1448
- https://doi.org/10.1116/1.585448
Abstract
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