EBIC AND CL STUDY OF LASER DEGRADATION
- 1 December 1991
- journal article
- Published by EDP Sciences in Journal de Physique IV
- Vol. 01 (C6) , C6-317
- https://doi.org/10.1051/jp4:1991647
Abstract
The first stages of Ga(Al)As laser degradation are studied by means of CL and EBIC measurements on cleaved facets of devices. Degradation by electron beam irradiation is compared to degradation during working. It is concluded that degradation starts in the depleted region with a loss of Si dopant electrical activity. Local degradation speed for Ga(Al)As epitaxial layers grown on either GaAs or Si substrates are comparedKeywords
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