Molecular beam epitaxial double heterojunction bipolar transistors with high current gains

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Abstract
Double heterojunction Al0.35Ga0.65As/GaAs bipolar junction transistors (DHBJTs) grown by molecular beam epitaxy (MBE) were fabricated and tested. Devices with 2000 Å and 500 Å base widths exhibited common emitter current gains of about 325 and 500, respectively, in a wide range of base and collector currents. The use of such high Al mole fraction and double heterojunctions placed stringent requirements on the growth parameter which had to be optimised and controlled very precisely to obtain such high current gains. These current gains compare with the previous best value of 120 obtained in a molecular beam epitaxial single heterojunction bipolar transistor having a 500 Å-thick base region.

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