Laser annealing of ion implanted silicon

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Abstract
The physical and electrical properties of ion implanted silicon annealing with high powered ruby laser radiation are summarized. Results show that pulsed laser annealing can lead to a complete removal of extended defects in the implanted region accompanied by incorporation of dopants into lattice sites even when their concentration far exceeds the solid solubility limit. Implanted dopants are redistributed considerably by pulsed laser annealing, and parameters influencing the profiles are discussed. Calculations and experimental results provide strong evidence that the pulsed laser annealing mechanism involves melting of the crystal to a depth of several thousand angstroms, dopant diffusion in liquid silicon, and subsequent liquid phase epitaxial regrowth from the underlying substrate. The application of pulsed laser irradiation to materials processing areas other than ion implantation is briefly discussed.

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