A monolithic 1 to 50 GHz distributed amplifier with 20 dBm output power
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 203-206
- https://doi.org/10.1109/gaas.1992.247190
Abstract
A monolithic 1 to 50 GHz distributed amplifier has been developed using a MODFET IC process to demonstrate a saturated power in excess of 20 dBm. The power output at the -1 dB gain compression point is greater than 18 dBm across the frequency range. The small signal gain is 8.5 dB+or-0.3 dB, and both input and output return loss are less than -10 dB. Physical layout considerations placed constraints on the design that resulted in a compromise between gain, RF voltage drive, and gain flatness.<>Keywords
This publication has 7 references indexed in Scilit:
- A K/Ka-band distributed power amplifier with capacitive drain couplingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Monolithic 9 to 70 GHz distributed amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 100 GHz high-gain InP MMIC cascode amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Technology Independent Large Signal Non Quasi-Static FET Models by Direct Construction from Automatically Characterized Device DataPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- Power-bandwidth considerations in the design of MESFET distributed amplifiersIEEE Transactions on Microwave Theory and Techniques, 1988
- Capacitively Coupled Traveling-Wave Power AmplifierIEEE Transactions on Microwave Theory and Techniques, 1984