PLASTIC DEFORMATION AND ELECTRONIC MECHANISMS IN SEMICONDUCTORS AND INSULATORS

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Abstract
It is proposed that dislocation kinks are associated with charged states in the energy gap of semiconductors and insulators, and that the dislocation velocity and therefore the plastic properties are a function of the position of the Fermi level. The theory is applied to the doping effect on dislocation velocity in Si and Ge, and the possible relevance of the mechanism to the "hydrolytic weakening" effect in quartz is discussed

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