Donor-Acceptor Pair and Bound Exçiton Recombination in Epitaxially Grown AlxGa1−xP
- 16 August 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 24 (2) , K189-K192
- https://doi.org/10.1002/pssa.2210240265
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Herstellung und physikalische Grundcharakterisierung von Al1–xGaxAs‐KristallenCrystal Research and Technology, 1973
- Photoluminescence of bi-doped Al1−xGaxAs single crystalsPhysica Status Solidi (a), 1971
- Conduction Bands in In1−xAlxPJournal of Applied Physics, 1970
- Optical Properties of the Group IV Elements Carbon and Silicon in Gallium PhosphideJournal of Applied Physics, 1968
- Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eVJournal of Applied Physics, 1967