Raman Scattering in the Mott Insulatorsand: Evidence for Orbital Excitations
- 9 October 2006
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 97 (15) , 157401
- https://doi.org/10.1103/physrevlett.97.157401
Abstract
Raman scattering is used to observe pronounced electronic excitations around 230 meV—well above the two-phonon range—in the Mott insulators and . Based on the temperature, polarization, and photon energy dependence, the modes are identified as orbital excitations. The observed profiles bear a striking resemblance to magnetic Raman modes in the insulating parent compounds of the superconducting cuprates, indicating an unanticipated universality of the electronic excitations in transition metal oxides.
Keywords
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