Plasma etching of III-V compound semiconductors
- 1 April 1983
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 1 (2) , 626-628
- https://doi.org/10.1116/1.572194
Abstract
Plasma etching techniques for III-V compound semiconductors are reviewed, emphasizing design considerations in the choice of gases, discharge parameters, and substrate temperature. Mechanisms are proposed for anisotropic, isotropic, and crystallographic chemical etching. Applications of plasma etching in device fabrication are given.Keywords
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