Mesh pattern of Ge islands grown using solid phase epitaxy
- 1 September 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 11 (5) , 2458-2462
- https://doi.org/10.1116/1.578592
Abstract
We present mesh patterns of Ge islands grown on a Si(111) surface using solid phase epitaxy. Typical experimental conditions for the formation of these mesh patterns are substrate temperatures of 300–500 °C and a Ge thickness of about 10 Å. The mesh pattern is due to preferential crystallization of a-Ge films at steps and at out-of-phase boundaries of 7×7 structures.This publication has 0 references indexed in Scilit: