A W-band monolithic amplifier
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 903-906 vol.2
- https://doi.org/10.1109/mwsym.1990.99724
Abstract
Monolithic amplifiers at 90 GHz have been fabricated using 75- mu m GaAs MESFET and pseudomorphic high-electron mobility transistor (PHEMT) devices. The below 0.2- mu m gate-length PHEMT devices have demonstrated an F/sub t/ of 100 GHz and an F/sub max/ of 200 GHz. Monolithic MESFET and PHEMT single-stage amplifiers have achieved 3.5-dB and 7-dB gain, respectively, at 90 GHz.<>Keywords
This publication has 2 references indexed in Scilit:
- High-performance InP-based HEMT millimeter-wave low-noise amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- InGaAs pseudomorphic HEMTs for millimeter wave power applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003