Flat-field approximation: a model for drift region in high-efficiency IMPATTS
- 1 January 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Journal on Solidstate and Electron Devices
- Vol. 1 (2) , 57-61
- https://doi.org/10.1049/ij-ssed.1977.0005
Abstract
A model for the drift region of high-efficiency IMPATT diodes is described. Results obtained using the model are presented and demonstrate the existence of important drift-region tuning effects.Keywords
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