Feedback Effects in the GaAs MESFET Model (Letters)
- 1 June 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 24 (6) , 383-385
- https://doi.org/10.1109/tmtt.1976.1128860
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Equivalent Circuit of the Schottky-Barrier Field-Effect Transistor at Microwave Frequencies (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1975
- Circuit model for the GaAs m.e.s.f.e.t. valid to 12 GHzElectronics Letters, 1975
- Equivalent circuit and gain of MOS field effect transistorsSolid-State Electronics, 1966
- A high-frequency representation of the MOS transistorProceedings of the IEEE, 1966