Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxy

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Abstract
We report the growth of nominally undoped InP by molecular beam epitaxy (MBE) from metallic indium, trimethylindium, or triethylindium and phosphine. We find significantly reduced acceptor incorporation when metalorganic sources are used, with exciton-dominated photoluminescence at 4.2 K and electron mobilities up to 47 500 cm2 V−1 s−1 at 77 K. The 4.2 K photoluminescence indicates that the residual shallow acceptors are either Ca, Mg, or Be. The carbon incorporation appears to be minimal. Interestingly, there is also little difference in electrical and optical properties of InP grown by metalorganic molecular beam epitaxy (MOMBE) using trimethyl or triethylindium, in marked contrast to the situation for GaAs MOMBE growth using trimethyl or triethylgallium.