Concentration and Magnetic-Field Dependence of Spin-Flip Magneto-Raman Scattering

A population-limited intensity of the spin-flip line in Stokes scattering from $n$-type semiconductors is calculated on the basis of virtual hole-electron transitions between valence and conduction bands. For donor concentrations $N$ such that the Fermi energy $E_F$ is less than the spin-flip energy $\hslash {\omega }_s$, the intensity is proportional to $N$ and independent of the magnetic field $H$. For $\hslash {\omega }_s<E_F<\frac{e\hslash H}{m^{*}c}$ (= cyclotron energy), the intensity is proportional to $H^3{N}^{-1\mathrm{}}$. Its behavior with increasing $E_F$ is predicted to be quasiperiodic, with a period $\hslash {\omega }_c$. The radiation-frequency dependence is described by a Wolff-type enhancement factor.