Picosecond dynamic response of nanoscale low-temperature grown GaAs metal-semiconductor-metal photodetectors

1 April 1996

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 68 (14) , 1972-1974
https://doi.org/10.1063/1.115643

Abstract

We have successfully fabricated and tested nanoscale metal‐semiconductor‐metal (MSM) devices with picosecond temporal response for photomixer applications around 830 nm. Previous reports on nanoscale MSM devices were not at this longer wavelength. The ultrafast response resulted from a low capacitance of about 1 fF, the use of low‐temperature grown (LT)‐GaAs active layers, and ultrashort finger separations. A two‐dimensional (2D) Monte Carlo model provided very accurate predictions of the transient MSM response. Values of the full width at half‐maxima photocurrents for the 50 and 100 nm devices were found to be 1.4 and 2 ps, respectively, in keeping with experimental observations.

Keywords

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