Etching of InP(100) 4×2 and molecular-beam epitaxially grown GaAs(100)-c(4×4) with atomic hydrogen
- 1 July 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 11 (4) , 1497-1501
- https://doi.org/10.1116/1.586920
Abstract
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