Simulations of Cascade Damage in Silicon
Open Access
- 1 January 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 27 (6) , 1474-1477
- https://doi.org/10.1109/tns.1980.4331054
Abstract
In an effort to better understand radiation damage to electronic materials, we use the binary-collision simulation code MARLOWE to model displacement cascades in silicon. We examine the average number of displacements produced by knock-on atoms as a function of their energy. The resulting vacancy-interstitial pairs are classified according to separation radius. We also examine a few particular cases of 100 keV cascades in silicon in order to highlight the importance that channeling has on the shape of displacement cascades.Keywords
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