Abstract
InSb films have been grown by steady-state evaporation, a technique that produces a vapor with the same composition as the starting liquid. Films deposited on glass substrates at room temperature typically have Hall coefficients of 10–50 cm3/C, resistivities of 0.05 and 0.5 Ω cm, and Hall mobilities of the order of 200 cm2/V sec. X-Ray fluorescence analyses of films deposited on thin plastic substrates at room temperature indicate random departure from stoichiometry of as much as 1%. Comments are made on source design and conditions that may cause deviations from stoichiometry. The theory of steady-state evaporation is briefly discussed.

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