Influence of lattice defects and some impurities on the luminescence of znte between 5160 Å and 7400 Å
- 1 May 1972
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 1 (2) , 243-254
- https://doi.org/10.1007/bf02660136
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Some properties of recombination radiation in p-n junctions of ZnTePhysica Status Solidi (a), 1970
- TYPE CONVERSION AND p-n JUNCTION FORMATION IN ION-IMPLANTED ZnTeApplied Physics Letters, 1969
- Luminescence Associated with Shallow Acceptor Centers in ZnTePhysical Review B, 1969
- EFFICIENT INJECTION ELECTROLUMINESCENCE IN ZnTe BY AVALANCHE BREAKDOWNApplied Physics Letters, 1966