Hole transport at the heterointerfaces of InGaAs/InP avalanche photodiodes

Publisher Website
Google Scholar
Abstract
The high speed response of avalanche photodiodes (APDs) is degraded by hole trapping at the heterointerface between the separated absorption and multiplication region. The photo-excited holes are trapped in a triangular quantum well formed at the heterojunction and escape from the quantum subbands only by thermionic emission. Practically, the insertion of a thin quaternary layer at the heterojunction (QI structure) has been successful in eliminating hole trapping. However, to design the proper transition region at the heterojunction, a quantum mechanical simulation model describing hole transport is required.

This publication has 0 references indexed in Scilit: