Ion bombardment control of morphology during the growth of hydrogenated amorphous silicon thin films by reactive ion beam deposition
- 1 January 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (1) , 36-38
- https://doi.org/10.1063/1.93756
Abstract
Low-energy ion bombardment of hydrogenated amorphous silicon thin films during growth is shown to have a pronounced effect on growth morphology. The films studied have been prepared by reactive ion beam sputtering. For substrate temperatures ≳200 °C and hydrogen content in the films ≳20 at. %, a growth instability develops, which results in a rough film morphology. Ion bombardment during growth stabilizes the film growth, and results in smooth morphologies.Keywords
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