Metastability in slow thin-film reactions
- 1 January 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (1) , 1198-1201
- https://doi.org/10.1103/physrevb.43.1198
Abstract
The phenomenon of slow amorphization during a constant-temperature and constant-pressure thin-film reaction is explained by a kinetic model emphasizing the rate of transition. We assume that the reaction obeys a maximum time-dependent rather than time-independent negative free-energy change. The product persists in the metastable state due to a high activation barrier to later transition. An amorphous Rh-Si alloy formed by thermally reacting a crystalline Rh thin film and single-crystal Si is reported.Keywords
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