Gold-aluminum thin-film interactions and compound formation
- 1 June 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (6) , 4047-4054
- https://doi.org/10.1063/1.329214
Abstract
Phase formation has been studied in Au‐Al thin‐film interactions by means of 4He+ MeV backscattering and x‐ray diffraction techniques. The films were annealded at temperatures low enough for no liquid phase formation. Au4Al, Au5Al2, Au2Al, AuAl, and AuAl2 were detected from samples prepared by depositing the exact stoichiometry quantities of Au and Al. The phase formation sequence was determined. The first phase formed is Au5Al2; the others are observed with the disappearence of one phase previously formed. For instance, Au4Al grows only when all Al is reacted and, on the other hand, AuAl2 when all Au is reacted. The sequence of the phases in the Au‐Al interactions cannot be interpreted on the basis of pure thermodynamic or kinetic arguments and a composite mechanism is proposed.This publication has 12 references indexed in Scilit:
- AuAl compound formation by thin film interactionsJournal of Crystal Growth, 1979
- Structural studies of thin nickel films on silicon surfacesJournal of Vacuum Science and Technology, 1978
- Effect of a glassy membrane on the Schottky barrier between silicon and metallic silicidesJournal of Vacuum Science and Technology, 1977
- First phase nucleation in silicon–transition-metal planar interfacesApplied Physics Letters, 1976
- Selective growth of metal-rich silicide of near-noble metalsApplied Physics Letters, 1975
- Kinetics of phase formation in Au—A1 thin filmsPhilosophical Magazine, 1975
- Kristallstrukturen der Phasen Au2Al(h), Au2Al1−(r) und Au2Al1+(r)Journal of the Less Common Metals, 1974
- Kristallstruktur von AuAlJournal of the Less Common Metals, 1970
- Intermetallic formation in gold-aluminum systemsSolid-State Electronics, 1970
- Thin film and bulk structures of phases in the system gold-aluminumThin Solid Films, 1968