Deposition of Dielectric Films by Remote Plasma Enhanced CVD

Publisher Website
Google Scholar
Abstract
We describe a plasma enhanced chemical vapor deposition process (PECVD) developed for the low temperature deposition of thin films of silicon oxides, nitrides and oxynitrides.The process, designated as remote PECVD (RPECVD), differs from conventional PECVD in two ways; (a) not all of the process gases are subjected to plasma excitation; and (b) the deposition is done outside of the plasma region.We include an empirical model of the deposition process chemistry and discuss the use of infrared spectroscopy (IR) and Auger electron spectroscopy (AES) to characterize the local atomic structure of the deposited films.