Dry etching of III–V semiconductors in CH3I, C2H5I, and C3H7I discharges
- 1 November 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (6) , 2378-2386
- https://doi.org/10.1116/1.586071
Abstract
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