Solid-state epitaxial growth of deposited Si films
- 1 August 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (3) , 280-282
- https://doi.org/10.1063/1.91071
Abstract
Epitaxial growth by furnace annealing of amorphous Si layers deposited onto 〈100〉 Si substrates is demonstrated. Substrate cleaning prior to the evaporation includes only conventional chemical procedures without any attempt to achieve an atomically clean substrate layer interface. The crystalline quality of the grown layers near the surface is comparable to that of 〈100〉 Si regrown layers amorphized by Si implantation. Residual damage is usually found near the substrate-layer interface. The growth mechanism is believed to be vertical growth of isolated epitaxial columns which subsequently grow laterally to consume the remaining amorphous Si.Keywords
This publication has 7 references indexed in Scilit:
- Regrowth of amorphous filmsJournal of Vacuum Science and Technology, 1978
- Epitaxial growth of deposited amorphous layer by laser annealingApplied Physics Letters, 1978
- Dechanneling by twinsPhysics Letters A, 1977
- Silicon epitaxy by solid-phase crystallization of deposited amorphous filmsApplied Physics Letters, 1977
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Line-shape extraction analysis of silicon oxide layers on silicon by channelling effect measurementsThin Solid Films, 1973
- Silicon on spinel: The interaction between deposition constituents and the substrate surfaceJournal of Crystal Growth, 1972