Computer Modeling of Radiation Hard AlGaAs Heterojunction Photodiode Structures
- 1 December 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (6) , 4612-4617
- https://doi.org/10.1109/tns.1981.4335773
Abstract
A one-dimensional variable composition computer program has been used to identify and optimize the device characteristics of AlGaAs photodiodes which determine the noise current induced in these devices by ionizing radiation. The radiation sensitivity of single and double heterostructure devices intended for operation at λ = .82μm have been examined and compared. The results indicate that appropriately optimized double heterostructure photodiodes are superior to single heterostructure photodiodes for operation in radiation environments. Optimization of the double heterostructure devices requires the proper choice of both the active region characteristics and the AlGaAs barrier region characteristics.Keywords
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