Preparation of Bi-Based Ferroelectric Thin Films by Sol-Gel Method
- 1 September 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (9S)
- https://doi.org/10.1143/jjap.34.5096
Abstract
The effects of Bi/Ta and Sr/Ta mole ratios on ferroelectric properties of Sr x Bi y Ta2O z [ SBIT(x/y/2.0); 0.7≤x≤1.0, 2.0≤y≤2.6] thin-film capacitors were investigated. The SBIT films were grown by the sol-gel method using a spin-on coating on Pt/Ta/SiO2/Si and Pt/Ti/SiO2/Si substrates. The films were annealed at 800° C for one hour in oxygen atmosphere. Remanent polarization (Pr) depended strongly on the Sr/Ta mole ratio, and increased with decrease of the Sr/Ta mole ratio. On the other hand, Pr was almost independent of the Bi/Ta mole ratio. Scanning electron microscopy (SEM) images show that crystal grains grew with decrease of the Sr/Ta mole ratio. Electron probe micro analyzer (EPMA) analysis revealed that Bi content in SBIT films increased with decrease in Sr composition from stoichiometry.Keywords
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