Frequency Triplers and Quadruplers with GaAs Schottky-Barrier Diodes at 450 and 600 GHz
- 1 May 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 27 (5) , 519-523
- https://doi.org/10.1109/tmtt.1979.1129660
Abstract
Submillimeter-wave solid-state sources have been developed with a frequency tripler and a frequency quadrupler driven by an 150-GHz band IMPATT oscillator. The tripler and quadrupler delivered an output power of -9.3 dBm at 447 GHz with a conversion loss of 20 dB, and -28 dBm at 589 GHz with a conversion loss of 39 dB, respectively. The frequency multiplication was performed by use of GaAs-Ni-Au schottky-barrier diodes with junction diameter of 1-3 mu m and hybrid integrated circuit techniques.Keywords
This publication has 7 references indexed in Scilit:
- Hybrid Integrated Frequency Multipliers at 300 and 450 GHzIEEE Transactions on Microwave Theory and Techniques, 1978
- 400 GHz Band Operation of Cooled Silicon IMPATT DiodesJapanese Journal of Applied Physics, 1978
- Submillimeter-Wave Detection with Submicron-Size Schottky-Barrier DiodesIEEE Transactions on Microwave Theory and Techniques, 1977
- Varactor Frequency Doublers and Triplers for the 200 to 300 GHz RangePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- Low-Noise Diodes and Mixers for the 1--2-mm Wavelength RegionIEEE Transactions on Microwave Theory and Techniques, 1974
- A Scaled Hybrid Integrated Multiplier from 10 to 30 GHzBell System Technical Journal, 1971
- Microstrip Lines for Microwave Integrated CircuitsBell System Technical Journal, 1969