Microscopic mechanism for dopant activation in hydrogenated amorphous silicon
- 15 June 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (17) , 12323-12326
- https://doi.org/10.1103/physrevb.41.12323
Abstract
A microscopic model for doping activation and passivation, in both n- and p-type hydrogenated amorphous silicon (a-Si:H), is proposed explaining the variation of doping efficiency with bias and thermal history and the activation energies and kinetics of dopant activation.Keywords
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