Electrochemical adsorption of metals on amorphous Se-Ge films

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Abstract
Electrochemicaladsorption of Ag and Cu on a−Se1−x Ge x films has been studied as a function of the composition of the films, angle of deposition (obliqueness), film thickness, pre‐illumination of the films and temperature of the electrolyticsolution. Metal adsorption is due to th eoxidation of germanium atoms by the metal ions present in the electrolyte. Its enhancement with obliwueness (angle of deposition f the film) arises due to increased surface defect sites/dangling bonds associated with the Ge atoms. Adsoprtion decreases for pre‐illuminated a−Se1−x Ge x films, presumably as a result of changes in the surface topography arising from structural rearrangements of the defect centers.