Investigation of the Internal Amplification Effect on Planar (p+–n–n+) Structures Made of High-Resistivity Silicon
- 1 November 2004
- journal article
- Published by Springer Nature in Instruments and Experimental Techniques
- Vol. 47 (6) , 799-808
- https://doi.org/10.1023/b:inet.0000049703.01596.be
Abstract
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