Infrared dielectric constant of cubic SiC

15 December 1995

journal article
conference paper
Published by AIP Publishing in Journal of Applied Physics

Vol. 78 (12) , 7255-7258
https://doi.org/10.1063/1.360438

Abstract

The real dielectric constant for chemical vapor deposition 3C‐SiC grown on silicon (Si) has been determined at 300 K and at 5 K from an analytic fit to interference fringes in transmission over the spectral range from the near infrared to the submillimeter region. This technique is capable of high accuracy being limited typically by the sample thickness and accuracy with which the thickness is measured. The resulting real dielectric constant is lower than the values usually attributed to this material. We find: at 300 K ε ₀=9.52 and ε _∞=6.38; at 5 K ε₀=9.28 and ε _∞=6.22. In all cases the estimated error is ±0.8%. The observed ratio ε₀ /ε_∞ agrees with the Lyddane–Sachs–Teller relation to 0.1% at 300 K and 0.2% at 5 K.

This publication has 2 references indexed in Scilit:

Temperature dependence of the optical phonons and transverse effective charge in $3 C$ -SiC
Physical Review B, 1982
Static Dielectric Constant of SiC
Physical Review B, 1970