AlSb/InAs HEMTs using modulation InAs(Si)-doping
- 19 February 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (4) , 403-404
- https://doi.org/10.1049/el:19980219
Abstract
AlSb/InAs HEMTs have been fabricated using Si-doping in a very thin (9 Å) InAs layer located in the upper AlSb barrier. Quantum Hall measurements show that there is no parallel channel. Devices with a 0.5 µm gate length exhibit a drain current density of > 1 A/mm and an fTLg product of 30 GHzµm at VDS = 0.4 V after correction for the gate bonding pad capacitance.Keywords
This publication has 3 references indexed in Scilit:
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