Studies on solution-grown thin films of ZnxCd1−xS
- 1 February 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (3) , 770-774
- https://doi.org/10.1063/1.340069
Abstract
Structural, optical, and electrical properties of thin films of ZnxCd1−xS (0≤x≤1.0) prepared by the solution‐growth technique are reported as a function of x. As‐grown films are composed of a hexagonal phase in the range 0≤x≤0.8 and of cubic phase for x=1.0. The lattice parameters a and c vary with x following Vegard’s law. The band gaps for as‐grown ZnxCd1−xS films are found to vary linearly with x from 2.40 eV for CdS to 3.6 eV for ZnS. The resistivity increases from 109 to 1012 Ω cm in the whole range 0≤x≤1.0. The effect of indium doping and H2 annealing on the above properties is also investigated.This publication has 9 references indexed in Scilit:
- Some properties of thin films of chemically deposited cadmium sulphideSolar Energy Materials, 1985
- A study of ultra-thin CuxS-CdyZn1-yS polycrystalline solar cellsJournal of Physics D: Applied Physics, 1983
- Electrical transport properties of heavily indium- doped polycrystalline CdS filmsThin Solid Films, 1982
- Chemical Solution Deposition of Inorganic FilmsPublished by Elsevier ,1982
- Structural and electronic properties of three aqueous-deposited films: CdS, CdO, ZnO, for semiconductor and photovoltaic applicationsSolar Energy Materials, 1980
- II-VI solid-solution films by spray pyrolysisJournal of Applied Physics, 1977
- ZnxCd1−xS films for use in heterojunction solar cellsApplied Physics Letters, 1976
- Preparation and some properties of ternary CdxZn1−xs polycrystalline thin filmsPhysica Status Solidi (a), 1972
- Electroluminescence and crystal structure in the alloys system ZnS-CdSPhysica, 1961