Pseudomorphic Si1−yCy and Si1−x−yGexCy alloy layers on Si
- 1 February 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 294 (1-2) , 98-104
- https://doi.org/10.1016/s0040-6090(96)09269-3
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Electrical properties of Si1−xCx alloys and modulation doped Si/Si1−xCx/Si structuresApplied Physics Letters, 1995
- Optical and electronic properties of SiGeC alloys grown on Si substratesJournal of Crystal Growth, 1995
- Sb-surfactant-mediated growth of Si/Si1−yCy superlattices by molecular-beam epitaxyApplied Physics Letters, 1995
- Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe HeterostructuresPhysical Review Letters, 1994
- Synthesis of dislocation free Siy(SnxC1−x)1−y alloys by molecular beam deposition and solid phase epitaxyApplied Physics Letters, 1994
- Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbonApplied Physics Letters, 1994
- Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy systemApplied Physics Letters, 1992
- The growth and characterization of Si1−yCy alloys on Si(001) substrateJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Synthesis of Si1−yCy alloys by molecular beam epitaxyApplied Physics Letters, 1992
- On the feasibility of growing dilute CxSi1−x epitaxial alloysApplied Physics Letters, 1990