Progress and issues of phase-change erasable optical recording media
- 1 December 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 181 (1-2) , 129-139
- https://doi.org/10.1016/0040-6090(89)90479-3
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Phase transformation kinetics—the role of laser power and pulse width in the phase change cycling of Te alloysApplied Physics Letters, 1987
- Nanosecond pulsed laser‐induced segregation of Te in TeOx filmsJournal of Vacuum Science & Technology A, 1986
- Compound materials for reversible, phase-change optical data storageApplied Physics Letters, 1986
- Reversible optical storage on a low-doped Te-based chalcogenide film with a capping layerApplied Optics, 1983
- Injection Laser Writing on Chalcogenide FilmsApplied Optics, 1974
- The extent of crystallization resulting from submicrosecond optical pulses on Te-based memory materialsApplied Physics Letters, 1973
- Amorphous semiconductors for switching, memory, and imaging applicationsIEEE Transactions on Electron Devices, 1973
- Laser-beam writing on amorphous chalcogenide films: crystallization kinetics and analysis of amorphizing energyApplied Physics Letters, 1973
- Laser writing and erasing on chalcogenide filmsJournal of Applied Physics, 1972
- RAPID REVERSIBLE LIGHT-INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORSApplied Physics Letters, 1971