Low voltage strained layer asymmetric Fabry–Perot reflection modulator

6 December 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (25) , 2117-2118
https://doi.org/10.1049/el:19901362

Abstract

Asymmetric Fabry–Perot reflection modulators based on strained InGaAs/GaAs multiple quantum wells are described. These devices give 2.8 dB of contrast at very low applied voltages (4 V) with an insertion loss of 4.4 dB.

Keywords

CAVITY RESONANCE
INSERTION LOSS
REFLECTION SPECTRA
4.4 DB
0 TO 4 V
LOW APPLIED VOLTAGES
ASYMMETRIC FABRY-PEROT REFLECTION MODULATOR
850 TO 1050 NM
STRAINED INGAAS-GAAS MULTIPLE QUANTUM WELLS

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