Theory of nonlinear optical absorption associated with free carriers in semiconductors
- 1 November 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 18 (11) , 1841-1864
- https://doi.org/10.1109/jqe.1982.1071469
Abstract
No abstract availableThis publication has 54 references indexed in Scilit:
- Experimental investigation of the infrared absorption saturation in p-type germanium and siliconApplied Physics Letters, 1982
- Laser-induced changes in the dispersive properties ofp−Gedue to intervalence-band transitionsPhysical Review B, 1981
- Determination of the third-order nonlinear optical coefficients of germanium through ellipse rotationOptics Letters, 1980
- Dependence of the saturation intensity of p-type germanium on impurity concentration and residual absorption at 10.59 μmSolid State Communications, 1980
- High-efficiency pulsed 106-μm phase-conjugate reflection via degenerate four-wave mixingOptics Letters, 1978
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Optical Third-Order Mixing in GaAs, Ge, Si, and InAsPhysical Review B, 1969
- Electron Scattering by Pair Production in SiliconPhysical Review B, 1967
- Drift Velocity and Anisotropy of Hot Electrons inGermaniumPhysical Review B, 1962
- Theory of the Electrical Properties of Germanium and SiliconPublished by Elsevier ,1955