Optical and structural properties of reactive ion beam sputter deposited CeO2 films
- 1 August 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 305 (1-2) , 191-195
- https://doi.org/10.1016/s0040-6090(97)00081-3
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Ion beam sputtering and dual ion beam sputtering of titanium oxide filmsJournal of Physics D: Applied Physics, 1995
- A review of ion beam assisted deposition of optical thin filmsVacuum, 1995
- Reaction and regrowth control of CeO2 on Si(111) surface for the silicon-on-insulator structureApplied Physics Letters, 1994
- Influence of substrate temperature on the properties of oxygen-ion-assisted deposited CeO2 filmsJournal of Applied Physics, 1992
- Growth of (110)-oriented CeO2 layers on (100) silicon substratesApplied Physics Letters, 1991
- Optical properties of ion assisted deposited CeO2 filmsJournal of Vacuum Science & Technology A, 1991
- Comparison of zirconia thin films sputtered from metal and compound targets by reactive ion-beam processJournal of Applied Physics, 1991
- Use of ion beam assisted deposition to modify the microstructure and properties of thin filmsInternational Materials Reviews, 1990
- Properties of CeO_2 thin films prepared by oxygen-ion-assisted depositionApplied Optics, 1985
- Determination of the thickness and optical constants of amorphous siliconJournal of Physics E: Scientific Instruments, 1983