Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition
- 1 September 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (5) , 492-494
- https://doi.org/10.1063/1.94363
Abstract
High quality single crystal films of AlxGa1−xN have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 °C over the entire range of x. Electrical and optical properties of the layers were measured. Electrical compensation by Be+ and N+ implants in the layers was studied. Schottky barriers were fabricated and their current voltage characteristics were studied. We also report some initial results of a study of GaN growth kinetics.Keywords
This publication has 6 references indexed in Scilit:
- Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxyJournal of Applied Physics, 1982
- A New Method for Growing GaAs Epilayers by Low Pressure OrganometallicsJournal of the Electrochemical Society, 1979
- Growth and properties of AlxGa1–xN epitaxial layersPhysica Status Solidi (a), 1978
- Growth and properties of GaxAl1-xN compoundsJournal of Physics C: Solid State Physics, 1978
- Optical Properties of the Silver and Cuprous HalidesPhysical Review B, 1963