High-energy (MeV) ion-beam mixing of Ti with SiC and Si3N4

1 April 1987

journal article
Published by Springer Nature in Journal of Materials Research

Vol. 2 (2) , 211-215
https://doi.org/10.1557/jmr.1987.0211

Abstract

Ion-beam mixing of Ti layers with sintered α-SiC and hot-pressed Si₃N₄ was measured for 1 McV Au₊ at doses of 1X10¹⁶ cm⁻² and 5X10¹⁶ cm⁻². Rutherford backscattering (RBS) and cross-section transmission electron microscopy (XTEM) were used to evaluate the mixing. Mixing was observed in Ti/SiC system; however, there was no mixing in Ti/Si₃N₄ system. Results are discussed in light of the enthalpy of mixing criterion for metal-insulator systems.

Keywords

NITROGEN
CROSS SECTION
TRANSMISSION ELECTRON MICROSCOPY
ION BEAM
TITANIUM
CHARGED PARTICLES
ELECTRON MICROSCOPY

This publication has 1 reference indexed in Scilit:

Thermodynamic Constraints on Ion Beam Mixing of Metals on Insulators
MRS Proceedings, 1985