Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn3In2O6 target
- 1 February 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 360 (1-2) , 233-240
- https://doi.org/10.1016/s0040-6090(99)01098-6
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium–zinc oxide films grown by low-pressure metal-organic chemical vapor depositionApplied Physics Letters, 1998
- Conductivity and Transparency of ZnO/SnO2-Cosubstituted In2O3Chemistry of Materials, 1997
- Preparation and characterization of ZnO:Al films by pulsed laser depositionThin Solid Films, 1997
- Properties of transparent conducting oxides formed from CdO and ZnO alloyed with SnO2 and In2O3Journal of Vacuum Science & Technology A, 1997
- A new transparent conducting oxide in the Ga2O3–In2O3–SnO2 systemApplied Physics Letters, 1997
- Highly conducting transparent thin films based on zinc oxideJournal of Materials Research, 1996
- Preparation of transparent and conductive In2O3–ZnO films by radio frequency magnetron sputteringJournal of Vacuum Science & Technology A, 1996
- New transparent conducting MgIn2O4Zn2In2O5 thin films prepared by magnetron sputteringThin Solid Films, 1995
- Dopant induced modifications in the physical properties of sprayed ZnO:In filmsJournal of Materials Research, 1993
- Optical properties of sputter-deposited ZnO:Al thin filmsJournal of Applied Physics, 1988