Activation mechanism for Si implanted into semi-insulating GaAs
- 23 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (25) , 1742-1744
- https://doi.org/10.1063/1.96821
Abstract
Hall effect and photoluminescence are measured for Si-implanted and SiO2-capped annealed GaAs, and for S-implanted and SiN-capped annealed GaAs. These experimental data are compared with those for Si-implanted and SiN-capped annealed GaAs. No remarkable change in sheet carrier concentration (Ns) is observed around dislocations and the SiAs photoluminescence peak is absent in the SiO2-capped annealed layer. Dislocations decrease Ns in the S-implanted layer. These results indicate that the activation efficiency of Si implanted into GaAs is determined by SiAs acceptor concentration.Keywords
This publication has 6 references indexed in Scilit:
- Mechanism for the threshold voltage shift of a GaAs field-effect transistor around dislocationsApplied Physics Letters, 1986
- Electrical uniformity for Si-implanted layer of completely dislocation-free and striation-free GaAsApplied Physics Letters, 1985
- Effect of Dislocations on Sheet Carrier Concentration of Si-Implanted, Semi-Insulating, Liquid-Encapsulated Czochralski Grown GaAsJapanese Journal of Applied Physics, 1985
- The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing MethodJapanese Journal of Applied Physics, 1985
- Direct observation of dislocation effects on threshold voltage of a GaAs field-effect transistorApplied Physics Letters, 1983
- Specific site location of S and Si in ion-implanted GaAsApplied Physics Letters, 1983