Determination of Oxygen in Silicon by Photon Activation Analysis for Calibration of the Infrared Absorption

1 August 1984

journal article
Published by The Electrochemical Society in Journal of the Electrochemical Society

Vol. 131 (8) , 1920-1923
https://doi.org/10.1149/1.2115991

Abstract

The oxygen content of silicon wafers has been determined by infrared absorption and photon activation analysis (PAA). We find a linear relationship between the absorption coefficient and the oxygen content (PAA). The conversion factor is , in remarkable agreement with various recent investigations employing independent analytical methods.

Keywords

SILICON
OXYGEN
CONVERSION
AGREEMENT
COEFFICIENT
ACTIVATION ANALYSIS
WAFERS
REMARKABLE
PHOTON ACTIVATION

This publication has 0 references indexed in Scilit: