Influence of Pulsed Electron Cyclotron Resonance Plasma on Gate Electrode Etching

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Abstract
The etching characteristics and the plasma parameters in pulsed electron cyclotron resonance (ECR) plasma were investigated using different control methods of microwave power. The relationships between pulse control condition and etch properties were discussed. Practical etching process which requires higher etch rate can be realized using fixed average power control. This result can be explained by means of the relationship between etch rate and ion current density. The fixed average power control is also effective for notch reduction. This result is achieved by supplying a large amount of high energy electrons at the beginning of microwave on-time. This mechanism is confirmed by means of time-resolved optical emission spectroscopy.